Numerical Simulation of Bosch Processing for Deep Silicon Plasma Etching
نویسندگان
چکیده
We present a simulation of the Bosch process using the feature-scale modeling software FPS3D. FPS3D is a generic simulator that can be applied to any set of materials, plasmas, reactive gases, and reactions for both 2D and 3D simulations of etching and deposition. FPS3D can simulate multi-time-step processes for which the fluxes, species, reactions, ion energies, angular distributions, and other parameters can change with each time-step; it is thus well-suited for Bosch process simulations. The polymer deposition and etching time-steps of the Bosch process are modeled and discussed in more detail than was previously attainable.
منابع مشابه
VERY DEEP TRENCHES IN SILICON WAFER USING DRIE METHOD WITH ALUMINUM MASK
Abstract: In this paper, a DRIE process for fabricating MEMS silicon trenches with a depth of more than 250 m is described. The DRIE was produced in oxygen-added sulfur hexafluoride (SF6) plasma, with sample cooling to cryogenic temperature using a Plasmalab System 100 ICP 180 at different RF powers. A series of experiments were performed to determine the etch rate and selectivity of the some m...
متن کاملMicrofabricated Hollow Microneedle Array Using ICP Etcher
This paper presents a developed process for fabrication of hollow silicon microneedle arrays. The inner hollow hole and the fluidic reservoir are fabricated in deep reactive ion etching. The profile of outside needles is achieved by the developed fabrication process, which combined isotropic etching and anisotropic etching with inductively coupled plasma (ICP) etcher. Using the combination of S...
متن کاملAn advanced reactive ion etching process for very high aspect-ratio sub-micron wide trenches in silicon
This paper reports on a practical modification of the two-step time-multiplexed plasma etching recipe (also known as the Bosch process) to chieve high aspect-ratio sub-micron wide trenches in silicon. Mixed argon and oxygen plasma depassivation steps are introduced in between the assivation and etching phases to promote the anisotropic removal of the passivation layer at the base of the trench....
متن کاملProcess and Performance of Copper TSVs
The difference between the performance of TSVs manufactured using SF6/O2 plasma etching or a Bosch process is explored through simulations. The geometric ratio of the sample TSV is approximately 5μm:58μm. The electrical performance of the devices is explored through capacitance and resistance extraction, while the reliability is analyzed using thermo-mechanical and electromigration simulations ...
متن کاملA Novel Method of Fabricating Optical Gratings Using the One Step DRIE Process on SOI Wafers
This paper describes a novel technique for manufacturing optical gratings using the one step DRIE (Deep Reactive Ion Etching) process. Utilising the notching effect documented in previous work when working with silicon on insulator (SOI) wafers, fully released, intact gratings have now been produced without the requirement for additional releasing processes. The one step process eliminates the ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2014